All articles - Crystallography

Subject of research: monocrystal samples of silicon of mark КДБ - 2, 5, 10, 100 which have been doped impurity atoms of manganese.
Purpose of work: working out of technology of reception of silicon with nanoclusters impurity atoms of manganese with steer able charging condition status and the magnetic moment, and also research of their properties and definition functional possibility for usage of such materials in modem electronics.
Method of research: electric, photo-electric methods, device of an electron spin resonance (ESR), atomic force and infra-red microscopes were used.
The results obtained and their novelty: for the first time effects arc found out: it is anomalous high-tcmpcraturc negative magnetoresistance, giant impurity photoconductivity in the field of A.=1,54-8 microns, it is anomalous infra-red quenching of photoconduction. Laws of change obtained effects from size electric arc established and magnetic field, temperatures intensity of lighting.
Practical value: the technology of reception of silicon with nanoclusters atom of manganese steer able charging condition status and concentration is developed. Possibility of creation on the basis of silicon with magnetic nanoclustcrs new type sensitive magnetic sensors, on the basis of NMR and IR photodetectors working is shown at presence enough high levels of background light.
Degree of embed and economic effectivity: the results received in work can be introduced on Open Society "PHOTON" and on chair «Electronics and microelectronics» TSTU in educational process.
Field of application: the microelectronic industry, in area use renewed energy sources.

The aim of research work is a Mossbauer study of electron exchange processes between tin centers in crystalline and glassy chalcogenide semiconductors.
Scientific novelty of dissertation work is as follows:
composition of As|.xSex, Gci.xSex и Gei.x.yAsySex, Asy(Gei.zSez)i.y glassy alloys and solid solutions has been determined by means of x-ray fluorescent technique, with fluorescent stimulation by brake X-ray radiation or by mono-energy electrons (with error ±0.0002) on x, у and z parameters in the surface layer of depth from 0.1 mm (using brake X-ray radiation) upto 0.1 mem (using electron stimulation);
for the first time EMS with "9mSn isomer using maternal ll9mmSn and ll9Sb nucleus has been used to determine the process of electron exchange between Sn^+ and Snj*+ states of donor If defects, created by tin mixture in degenerate and non-dcgcncratc crystalline lead chalcogenides and glassy alloys (As2Se3)|.z(SnSe) z.x(GeSe)x and samples of solid solutions (A = Na, Tl, x = 0.01-^0.02 and 0.005) within temperature range 80 + 900 K;
it has been shown that the lines responding to Sn^+ and Sn^+ states were converging in the Mossbauer spectra with the temperature increase, that corresponds to the electron exchange between the states at the expense of two electrons transfer simultaneously;
the dependence of central shift of ll9Sn Mossbauer spectra for Ph^Sn^-xSe, compounds on composition has been explained within electron exchange model between Sn^+ and Sn^ states of donor U center created by tin;
electron exchange between Sn^’and Sn3+ states has not been detected in the Ge2S3, Ge3Se3и As0S3, As,Se3glassy alloys containing amphoteric U defects created by tin impurity upto 480 K, that can be explained by existance of bivalent and four-valent tin in different coordinational states.