The aim of research work is numerical calculation of parameters of the structure with Si2Mn2S cells and investigation of the photoelectric parameters of single-crystalline silicon doped with Mn and S.
Scientific novelty of the research work:
samples of single-crystallinc silicon with erosion-free surface after high-tcmpcraturc doping with sulfur were obtained;
ionizing levels, infra-red quenching diapason were revealed in Si samples doped by S. as well as negative photo-conductivity in times of direct connection explained by injection of charge carriers was also revealed;
the phenomenon of sign reversal of charge carriers was detected in silicon samples doped with Mn and S at temperature T = 123K. and T = 198K. when illuminated due to charge exchange of deep levels associated with sulfur and manganese;
significant fraction of the infrared diapason in the values of Uoc and isc in a single-crystalline silicon sample doped with Mn and S has been revealed, which suggests to a certain extent that it would be possible to apply silicon with MnS clusters as a photocell;
total energy, IR-vibration and electronic spectra, and the spatial position of electrons of the structure with Si2MmS cells were calculated by implementing numerical calculation technique;
a fairly good correlation was found between the value of the vibration mode, the size of the energy gap of the cluster structure with Si2Mn2S cells, and experimental data on the study of the vibration spectra and photoconductivity of a sample doped with Mn and S.
